Room‐temperature operation of GaAs Bragg‐mirror lasers

Design and Room-Temperature Operation of GaAs/AlGaAs Multiple Quantum Well Nanowire Lasers.

We present the design and room-temperature lasing characteristics of single nanowires containing coaxial GaAs/AlGaAs multiple quantum well (MQW) active regions. The TE01 mode, which has a doughnut-shaped intensity profile and is polarized predominantly in-plane to the MQWs, is predicted to lase in these nanowire heterostructures and is thus chosen for the cavity design. Through gain and loss ca...

Capping of InAs/GaAs Quantum Dots for GaAs Based Lasers

Improved Performance of GaAsSb/GaAs SQW Lasers

This paper reports the improvements and limitations of MBE grown 1.3μm GaAsSb/GaAs single QW lasers. At room temperature, the devices show a low threshold current density (Jth) of 253 Acm, a transparent current density of 98 Acm, an internal quantum efficiency of 71%, an optical loss of 18 cm and a characteristic temperature (T0) = 51K. The defect related recombination in these devices is negli...

Energy Levels of InGaAs/GaAs Quantum Dot Lasers with Different Sizes

In this paper, we have studied the strain, band-edge, and energy levels of cubic InGaAs quantum dots (QDs) surrounded by GaAs. It is shown that overall strain value is larger in InGaAs-GaAs interfaces, as well as in smaller QDs. Also, it is proved that conduction and valence band-edges and electron-hole levels are size dependent; larger QD sizes appeared to result in the lower recombination...

Continuous-wave operation of extremely low-threshold GaAs/AlGaAs broad-area injection lasers on (100) Si substrates at room temperature.

Room-temperature continuous-wave operation of large-area (120 microm x 980 microm) GaAs/AlGaAs graded-refractive-index separate-confinement heterostructure lasers on (100) Si substrates has been obtained. Minimum threshold-current densities of 214 A/cm(2) (1900-microm cavity length), maximum slope efficiencies of about 0.8 W/A (600-microm cavity length), and optical power in excess of 270 mW/fa...